| Part number | K4E171611C |
|---|---|
| Datasheet | K4E171611C-Samsung.pdf |
| File Size | 509.24 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 1M x 16Bit CMOS Dynamic RAM |
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This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K4E171611D | 1M x 16Bit CMOS Dynamic RAM |
| K4E171612C | 1M x 16Bit CMOS Dynamic RAM |
| K4E171612D | 1M x 16Bit CMOS Dynamic RAM |
| K4E170411D | 4M x 4Bit CMOS Dynamic RAM |
| K4E170412D | 4M x 4Bit CMOS Dynamic RAM |
| K4E170811D | 2M x 8Bit CMOS Dynamic RAM |
| K4E170812D | 2M x 8Bit CMOS Dynamic RAM |
| K4E151611C | 1M x 16Bit CMOS Dynamic RAM |
| K4E151611D | 1M x 16Bit CMOS Dynamic RAM |
| K4E151612C | 1M x 16Bit CMOS Dynamic RAM |
