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K4E171612D Key Features

  • Part Identification
  • K4E171611D-J(T) (5V, 4K Ref.)
  • K4E151611D-J(T) (5V, 1K Ref.)
  • K4E171612D-J(T) (3.3V, 4K Ref.)
  • K4E151612D-J(T) (3.3V, 1K Ref.)
  • Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
  • 2 CAS Byte/Word Read/Write operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Self-refresh capability (L-ver only)

Related Samsung Semiconductor Datasheets

Part Number Description
K4E171612C 1M x 16Bit CMOS Dynamic RAM
K4E171611C 1M x 16Bit CMOS Dynamic RAM
K4E171611D 1M x 16Bit CMOS Dynamic RAM
K4E170411D 4M x 4Bit CMOS Dynamic RAM
K4E170412D 4M x 4Bit CMOS Dynamic RAM

K4E171612D Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.