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K4E170811D - 2M x 8Bit CMOS Dynamic RAM

Description

This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer and personal computer.

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Datasheet preview – K4E170811D

Datasheet Details

Part number K4E170811D
Manufacturer Samsung
File Size 257.05 KB
Description 2M x 8Bit CMOS Dynamic RAM
Datasheet download datasheet K4E170811D Datasheet
Additional preview pages of the K4E170811D datasheet.

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Full PDF Text Transcription

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K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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