K4F170411D Datasheet (4M x 4Bit CMOS Dynamic RAM)

Part: K4F170411D
Manufacturer: Samsung Semiconductor
Size: 225.41 KB

K4F170411D Key Features

Part Identification
K4F170411D-B(F) (5V, 4K Ref.)
K4F160411D-B(F) (5V, 2K Ref.)
K4F170412D-B(F) (3.3V, 4K Ref.)
K4F160412D-B(F) (3.3V, 2K Ref.)
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast parallel test mode capability

Related Samsung Semiconductor Datasheets

Part Number	Description
K4F170412D	4M x 4Bit CMOS Dynamic RAM
K4F170811D	2M x 8Bit CMOS Dynamic RAM
K4F170812D	2M x 8Bit CMOS Dynamic RAM
K4F171611D	1M x 16Bit CMOS Dynamic RAM
K4F171612D	1M x 16Bit CMOS Dynamic RAM

K4F170411D Description

This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.