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K4F171611D Key Features

  • Part Identification
  • K4F171611D-J(T) (5V, 4K Ref.)
  • K4F151611D-J(T) (5V, 1K Ref.)
  • K4F171612D-J(T) (3.3V, 4K Ref.)
  • K4F151612D-J(T) (3.3V, 1K Ref.)
  • Fast Page Mode operation
  • 2 CAS Byte/Word Read/Write operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Self-refresh capability (L-ver only)

Related Samsung Semiconductor Datasheets

Part Number Description
K4F171612D 1M x 16Bit CMOS Dynamic RAM
K4F170411D 4M x 4Bit CMOS Dynamic RAM
K4F170412D 4M x 4Bit CMOS Dynamic RAM
K4F170811D 2M x 8Bit CMOS Dynamic RAM
K4F170812D 2M x 8Bit CMOS Dynamic RAM

K4F171611D Description

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.