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K4F170812D Key Features

  • Part Identification
  • K4F170811D-B(F) (5V, 4K Ref.)
  • K4F160811D-B(F) (5V, 2K Ref.)
  • K4F170812D-B(F) (3.3V, 4K Ref.)
  • K4F160812D-B(F) (3.3V, 2K Ref.)
  • Fast Page Mode operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Self-refresh capability (L-ver only)
  • Fast parallel test mode capability

Related Samsung Semiconductor Datasheets

Part Number Description
K4F170811D 2M x 8Bit CMOS Dynamic RAM
K4F170411D 4M x 4Bit CMOS Dynamic RAM
K4F170412D 4M x 4Bit CMOS Dynamic RAM
K4F171611D 1M x 16Bit CMOS Dynamic RAM
K4F171612D 1M x 16Bit CMOS Dynamic RAM

K4F170812D Description

This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.