K4T1G044QM Description
AC & DC Operating Conditions & Specifications Page 2 of 29 Rev.1.1 Jan. 2005 1Gb M-die DDR2 SDRAM 0. Speed bin is in order of CL-tRCD-tRP.
K4T1G044QM Key Features
- JEDEC standard 1.8V ± 0.1V Power Supply
- VDDQ = 1.8V ± 0.1V
- 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
- 8 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5
- Programmable Additive Latency: 0, 1 , 2 , 3 and 4
- Write Latency(WL) = Read Latency(RL) -1
- Burst Length: 4 , 8(Interleave/nibble sequential)
- Programmable Sequential / Interleave Burst Mode