K4T1G044QM - 1Gb M-die DDR2 SDRAM Specification

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Samsung

Part number	K4T1G044QM
Manufacturer	Samsung
File Size	457.24 KB
Description	1Gb M-die DDR2 SDRAM Specification
Datasheet	K4T1G044QM Datasheet
Additional preview pages of the K4T1G044QM datasheet.

Rev.1.1 Jan.

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
8 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Read Latency(RL) -1.
Burst Length: 4 , 8(Interleav.

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K4T1G044QA-ZCE6 - 1Gb A-die DDR2 SDRAM Specification (Samsung semiconductor)
K4T1G044QC - (K4T1G044QC / K4T1G084QC) 1Gb C-die DDR2 SDRAM Specification (Samsung semiconductor)
K4T1G044QE - 1Gb E-die DDR2 SDRAM (Samsung Electronics)
K4T1G044QQ - (K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification (Samsung semiconductor)
K4T1G084QA-ZCE6 - 1Gb A-die DDR2 SDRAM Specification (Samsung semiconductor)
K4T1G084QC - (K4T1G044QC / K4T1G084QC) 1Gb C-die DDR2 SDRAM Specification (Samsung semiconductor)
K4T1G084QD - (K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification (Samsung semiconductor)
K4T1G084QE - 1Gb E-die DDR2 SDRAM (Samsung Electronics)
K4T1G084QG - 1Gb G-die DDR2 SDRAM (Samsung semiconductor)

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Published: Aug 15, 2005 |