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K4T1G044QA - 1Gb A-die DDR2 SDRAM Specification

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Samsung semiconductor

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K4T1G044QA 1Gb A-die DDR2 SDRAM Specification by Samsung semiconductor - Datasheet Preview — Datasheet preview – K4T1G044QA

Datasheet Details

Part number	K4T1G044QA
Manufacturer	Samsung semiconductor
File Size	665.07 KB
Description	1Gb A-die DDR2 SDRAM Specification
Datasheet	K4T1G044QA Datasheet
Additional preview pages of the K4T1G044QA datasheet.

K4T1G044QA Product details

Description

3.

4.

Rev.

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MHz fCK for 667Mb/sec/pin.
8 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Rea.

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Other Datasheets by Samsung semiconductor

K4T1G044QA-ZCE6 - 1Gb A-die DDR2 SDRAM Specification
K4T1G044QC - (K4T1G044QC / K4T1G084QC) 1Gb C-die DDR2 SDRAM Specification
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K4T1G084QC - (K4T1G044QC / K4T1G084QC) 1Gb C-die DDR2 SDRAM Specification
K4T1G084QD - (K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification
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K4T1G084QQ - (K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification

Published: Jul 19, 2008 |