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SW88N60K2 - N-channel MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • TO-247.
  • High ruggedness.
  • Low RDS(ON) (Typ 24mΩ)@VGS=10V.
  • Low Gate Charge (Typ 188nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet preview – SW88N60K2

Datasheet Details

Part number SW88N60K2
Manufacturer Samwin
File Size 662.63 KB
Description N-channel MOSFET
Datasheet download datasheet SW88N60K2 Datasheet
Additional preview pages of the SW88N60K2 datasheet.

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Full PDF Text Transcription

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SW88N60K2 N-channel Enhanced mode TO-247 MOSFET Features TO-247 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 188nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application: Solar/PV inverter、Servicer、 Telecom、PC power、UPS、EV-charger 1 23 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
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