SW88N60K2 Description
Source This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW88N60K2 Key Features
- High ruggedness
- Low RDS(ON) (Typ 24mΩ)@VGS=10V
- Low Gate Charge (Typ 188nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application: Solar/PV inverter、Servicer、