Datasheet4U Logo Datasheet4U.com

DS120040G2 - SiC Schottky Barrier Diode

General Description

VRRM 1200 V IF(135℃) 22 A QC 102 nC TO-247-3L Marking DS120040G2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF (Per Leg/De

📥 Download Datasheet

Datasheet Details

Part number DS120040G2
Manufacturer Sanan
File Size 326.57 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet DS120040G2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Datasheet SDS120J040G2 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device SDS120J040G2 Package TO-247-3L Product Description VRRM 1200 V IF(135℃) 22* A QC 102* nC TO-247-3L Marking DS120040G2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF (Per Leg/Device) Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFR