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DS120040H2 - SiC Schottky Barrier Diode

Description

VRRM 1200 V IF(135℃) 40 A QC 198 nC TO-247-2L Device SDS120J040H2 Package TO-247-2L Marking DS120040H2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current

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Datasheet Details

Part number DS120040H2
Manufacturer Sanan
File Size 328.02 KB
Description SiC Schottky Barrier Diode
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Datasheet 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile SDS120J040H2 Product Description VRRM 1200 V IF(135℃) 40 A QC 198 nC TO-247-2L Device SDS120J040H2 Package TO-247-2L Marking DS120040H2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current Surge non-repetitive forward current Repetitive Peak Forward Surge Current VRRM VRSM VDC IF IFSM IFRM 1200 1200 1
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