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DS120040G3 - SiC Schottky Barrier Diode

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VRRM 1200 V IF(135℃) 56 A QC 108 nC TO-247-3L Device SDS120J040G3 Package TO-247-3L Marking DS120040G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous

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Datasheet Details

Part number DS120040G3
Manufacturer Sanan
File Size 326.93 KB
Description SiC Schottky Barrier Diode
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Datasheet SDS120J040G3 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Product Description VRRM 1200 V IF(135℃) 56** A QC 108* nC TO-247-3L Device SDS120J040G3 Package TO-247-3L Marking DS120040G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current Total power dissipa
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