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SDS120J040G2 - SiC Schottky Barrier Diode

Datasheet Details

Part number SDS120J040G2
Manufacturer Sanan
File Size 326.57 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SDS120J040G2 Datasheet

General Description

VRRM 1200 V IF(135℃) 22* A QC 102* nC TO-247-3L Marking DS120040G2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF (Per Leg/Device) Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1200 1200 49/98 22/45 20/40 180* 112* TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =142℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 Total power dissipation i2t value Operating temperature storage temperature Mounting Torque PTOT ∫i2dt Tj Tstg M 176* 171* -55~175 -55~175 1 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ Nm M3 Screw SDS120J040G2 1 /4 Rev.

1.0.1 2023.03 Datasheet SDS120J040G2 Thermal Characteristics Parameter Symbol Thermal resistance Rth(j-c) ** Per device * Per leg Min.

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Overview

Datasheet SDS120J040G2 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching.