Datasheet Details
| Part number | SDS120J040G3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 326.93 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet |
 SDS120J040G3 Datasheet
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| Part number | SDS120J040G3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 326.93 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet |
SDS120J040G3 Datasheet
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VRRM 1200 V IF(135℃) 56** A QC 108* nC TO-247-3L Device SDS120J040G3 Package TO-247-3L Marking DS120040G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current Total power dissipation i2t value Operating temperature storage temperature Mounting Torque VRRM VRSM VDC IF IFSM IFRM PTOT ∫i2dt Tj Tstg M 1200 1200 1200 60/120 28/56 20/40 180* 120* 242* 162* -55~175 -55~175 1 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =153℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ Nm M3 Screw SDS120J040G3 1 /4 Rev.
1.0.0 2022.11 Datasheet SDS120J040G3 Thermal Characteristics Parameter Symbol Thermal resistance Rth(j-c) ** Per device * Per leg Min.
/ Values Typ.
Datasheet SDS120J040G3 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching.
| Part Number | Description |
|---|---|
| SDS120J040G2 | SiC Schottky Barrier Diode |
| SDS120J040H2 | SiC Schottky Barrier Diode |
| SDS120J002D2 | SiC Schottky Barrier Diode |
| SDS120J002D3 | SiC Schottky Barrier Diode |
| SDS120J005D3 | SiC Schottky Barrier Diode |
| SDS120J010D3 | SiC Schottky Barrier Diode |
| SDS120J010E3 | SiC Schottky Barrier Diode |
| SDS120J010G3 | SiC Schottky Barrier Diode |
| SDS120J010H3 | SiC Schottky Barrier Diode |
| SDS120J015H3 | SiC Schottky Barrier Diode |