Datasheet Details
| Part number | SDS120J040H2 |
|---|---|
| Manufacturer | Sanan |
| File Size | 328.02 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet |
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| Part number | SDS120J040H2 |
|---|---|
| Manufacturer | Sanan |
| File Size | 328.02 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet |
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VRRM 1200 V IF(135℃) 40 A QC 198 nC TO-247-2L Device SDS120J040H2 Package TO-247-2L Marking DS120040H2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current Surge non-repetitive forward current Repetitive Peak Forward Surge Current VRRM VRSM VDC IF IFSM IFRM 1200 1200 1200 90 40 320 154 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 Total power dissipation i2t value Operating temperature storage temperature PTOT ∫i2dt Tj Tstg 300 512 -55~175 -55~175 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ Mounting Torque M 1 Nm M3 Screw SDS120J040H2 1 /4 Rev.
1.0.0 2022.01 Datasheet SDS120J040H2 Thermal Characteristics Parameter Thermal resistance Symbol Rth(j-c) Min.
/ Values Typ.
Datasheet 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low.
| Part Number | Description |
|---|---|
| SDS120J040G2 | SiC Schottky Barrier Diode |
| SDS120J040G3 | SiC Schottky Barrier Diode |
| SDS120J002D2 | SiC Schottky Barrier Diode |
| SDS120J002D3 | SiC Schottky Barrier Diode |
| SDS120J005D3 | SiC Schottky Barrier Diode |
| SDS120J010D3 | SiC Schottky Barrier Diode |
| SDS120J010E3 | SiC Schottky Barrier Diode |
| SDS120J010G3 | SiC Schottky Barrier Diode |
| SDS120J010H3 | SiC Schottky Barrier Diode |
| SDS120J015H3 | SiC Schottky Barrier Diode |