2SC4495
High h FE LOW VCE (sat)
Silicon NPN Triple Diffused Planar Transistor s Absolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4495 80 50 6 3 1 25(Tc=25°C) 150
- 55 to +150 Unit V V V A A W °C °C
Application : Audio Temperature pensation and General Purpose
(Ta=25°C) 2SC4495 10max 10max 50min 500min 0.5max 40typ 30typ V MHz p F
13.0min s Electrical Characteristics
Symbol ICBO IEBO V(BR)CEO h FE VCE(sat) f T COB Conditions VCB=80V VEB=6V IC=25m A VCE=4V, IC=0.5A IC=1A, IB=20m A VCE=12V, IE=- 0.1A VCB=10V,f=1MHz
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Unit
µA
16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 s Typical Switching Characteristics (mon Emitter)
VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V)
- 5 IB1 (m A) 15 IB2 (m A)
- 30 ton (µs) 0.45typ tstg (µs) 1.60typ tf (µs) 0.85typ
3.9 B C E
- V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V...
