The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Built-in Avalanche Diode for Surge Absorbing Darlington
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1796 60±10 60±10 6 4 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SD1796
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SD1796 10max 10max 60±10 2000min 1.5max 60typ 45 typ V MHz pF
13.0min
Equivalent circuit
B
C
(3 k Ω)(1 5 0 Ω) E
Application : Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
V
16.9±0.3 8.4±0.2
mA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.
2SD1796 Datasheet
