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MOS FET FKV560FP (under development)
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) * PD Tch Tstg * PW Ratings 50 ± 20 ± 60 ± 180
VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V
(16.2)
70 (Tc=25ºC) 150 –55 to +150 100µs, duty 1%
(Ta=25ºC) Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A min 50 +10 –5 100 2.3 9 2000 1000 150 To be defined 1.0 1.5 11 Ratings typ max
(Ta=25ºC) Unit V
External Dimensions FM100 (full-mold)
0.8 5.5 ±0.2 3.6 ±0.1 15.6 ±0.2 5.5 ±0.2 3.45 ±0.2
1.3 20.
FKV560FP Datasheet
