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MOS FET FKV560S (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol Ratings VDSS 50 ± 20 VGSS ± 45 ID ± 135 ID (pulse)* PD 60 (Tc=25ºC) Tch 150 Tstg –55 to +150 * PW 100µs, duty 1% Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V min 50 +10 –5 100 2.0 9 2000 1000 150 To be defined 1.0 1.5 11 Ratings typ max
(Ta=25ºC) Unit V
External Dimensions TO220S
10.2±0.3 (1.4)
4.44±0.2 1.3±0.2
µA µA V S mΩ pF pF pF ns ns ns ns V
10.0 –0.5
+0.3
a
8.6±0.3
(1.5)
1.0 20.
FKV560S Datasheet
