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2SA1177 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • High fT (230MHz typ. ) and small Cre (1.1 pF typ. ).
  • Small NF (2.5dB typ. ). 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 3.0 3.8 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings.
  • 30.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use · Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. Package Dimensions unit:mm 2033A 4.0 [2SA1177] 3.0 2.2 Features · High fT (230MHz typ.) and small Cre (1.1 pF typ.). · Small NF (2.5dB typ.). 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 3.0 3.