2SB1700
2SB1700 is PNP/NPN Epitaxial Planar Silicon Darlington Transistors manufactured by SANYO.
Features
- -
- 3.0
1.5 7.5
1.6 0.8
0.8 0.75
High DC current gain. Large current capacity and wide ASO. Micaless package facilitating mounting.
( ) : 2SB1700
1 : Emitter 2 : Collector 3 : Base
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
2.4 4.8
SANYO : TO-126ML
Conditions
Ratings (--)110 (-)100 (-)6 (-)3 (-)5 1.5 10 150 --55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)5V, IC=0 Ratings min typ max (--)0.1 (--)3.0 Unit m A m A
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003 TS IM TA-100279, 100280 No.7380-1/4
2SB1700 / 2SD2663
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Parameter DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter...
