2SB1739
2SB1739 is / NPN Epitaxial Planar Silicon Transistors manufactured by SANYO.
Features
- -
- - pact Motor Driver Applications
Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity.
Specifications ( ) : 2SB1739
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)40 (--)30 (-)6 (-)3 (-)5 1 15 150 --55 to +150 Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Diode Forwad Voltage Base-to-Emitter Resistance Symbol ICBO h FE1 h FE2 f T Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO1 V(BR)CEO2 VF RBE Conditions VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)2A VCE=(--)2V, IC=(--)0.5A VCB=(--)10V, f=1MHz IC=(--)2A, IB=(-)100m A IC=(--)2A, IB=(-)100m A IC=(--)10µA, IE=0A IC=(--)10µA, RBE=∞ IC=(--)10m A, RBE=∞ IF=(--)0.5A 0.8 (-)40 (-)40 (-)30 (--)1.5 Ratings min 70 50 100 (55)40 (--0.28)0.23 (-0.6)0.5 (--)1.5 MHz p F V V V V V V kΩ typ max (--)1.0 Unit µA
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using...