2SC3068 Datasheet | SANYO

Features - High DC current gain (h FE=800 to 3200). - Large current capacity. - Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). - High VEBO (VEBO≥15V). JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions B : Base C : Collector E : Emitter SANYO : NP Ratings 30 25 15 300 500 60 600 150 - 55 to +150 Unit V V V m A m A m A m W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO h FE1 h FE2 f T Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10m A VCE=5V, IC=200m A VCE=10V, IC=10m A VCB=10V, f=1MHz 800 600 250 4.5 MHz p F 1500 Conditions Ratings min typ max 0.1 0.1 3200 Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1098HA (KT)/6140MO/4207KI/3085KI/2033KI, TS No.943- 1/3 .Data...