2SC3069
2SC3069 is NPN Transistor manufactured by SANYO.
Features
- High DC current gain (h FE=800 to 3200).
- Low collector-to-emitter saturation voltage
(VCE(sat)=0.5V max).
- High VEBO (VEBO≥15V).
Package Dimensions unit:mm 2003A
[2SC3069]
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO h FE1 h FE2 f T Cob
VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10m A VCE=5V, IC=100m A VCE=10V, IC=10m A VCB=10V, f=1MHz
B : Base C : Collector E : Emitter SANYO : NP
Ratings 60 50 15
200 300
40 600 150
- 55 to +150
Unit V V V m A m A m A m W ˚C ˚C
Ratings min typ
800 1500 600
250 4.0 max 0.1 0.1
Unit µA µA
MHz p F
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
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