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2SC3151 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High breakdown voltage (VCBO≥900V).
  • Fast switching speed.
  • Wide ASO. Package Dimensions unit:mm 2022A [2SC3151] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Condition.

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Ordering number:EN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3151] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 900 800 7 1.5 5 0.