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2SC3153 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High breakdown voltage (VCBO≥900V).
  • Fast switching speed.
  • Wide ASO. Package Dimensions unit:mm 2022A [2SC3153] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Pulse, PW≤300µs, Duty Cycle≤10% Tc=25˚C Electric.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO.