Adoption of MBIT process. Package Dimensions
unit:mm 2022A
[2SC3460]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Tc=25˚.
Full PDF Text Transcription for 2SC3460 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC3460. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:EN1594B NPN Triple Diffused Planar Silicon Transistor 2SC3460 800V/6A Switching Regulator Applications Features · High breakdown voltage and high reliabil...
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lator Applications Features · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3460] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C PW≤300µs, Duty Cycle≤10% http://www.DataSheet4U.
2SC3460 Datasheet
