Adoption of MBIT process. Package Dimensions
unit:mm 2022A
[2SC3461]
Specifications
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperat.
Full PDF Text Transcription for 2SC3461 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC3461. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:EN1596C NPN Triple Diffused Planar Type Silicon Transistor 2SC3461 800V/8A Switching Regulator Applications Features · High breakdown voltage and high rel...
View more extracted text
Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process.