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2SC3601 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( ) : 2SA1407 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipatio.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC3600 PNP/NPN Epitaxial Planar Silicon Transistors
2SC3636 NPN Triple Diffused Planar Silicon Transistor
2SC3637 NPN Triple Diffused Planar Silicon Transistor
2SC3638 NPN Triple Diffused Planar Silicon Transistor
2SC3642 NPN Triple Diffused Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN1766D 2SA1407 / 2SC3601 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1407 / 2SC3601 Applications • • • • Ultrahigh-Definition CRT Display Video Output Applications Ultrahigh-definition CRT display. Video output. Color TV chroma output. Wide-band amp. Features • • • • • High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process.