2SC3638 - NPN Triple Diffused Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SC3638
Manufacturer	Sanyo Semicon Device
File Size	114.31 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3638 Datasheet
Additional preview pages of the 2SC3638 datasheet.

High reliability (Adoption of HVP process).
Fast speed.
High breakdown voltage.
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3638] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical.

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Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |