2SC3636 Overview
Key Features
- High reliability (Adoption of HVP process)
- High breakdown voltage
- Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications
| Part | 2SC3636 |
|---|---|
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Category | Transistor |
| Manufacturer | SANYO |
| Size | 115.91 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3636 | Inchange Semiconductor | Silicon NPN Power Transistors |
| 2SC3636 | SavantIC | SILICON POWER TRANSISTOR |
| 2SC3632-Z | NEC | NPN Transistor |
| 2SC3632-Z | Rectron | Silicon NPN Power Transistor |
| 2SC3632 | Rectron | Silicon NPN Power Transistor |