2SC3636 - Silicon NPN Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2SC3636
Manufacturer	Inchange Semiconductor
File Size	198.53 KB
Description	Silicon NPN Power Transistors
Datasheet	2SC3636 Datasheet
Additional preview pages of the 2SC3636 datasheet.

Product details

Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflect

📁 Similar Datasheet

2SC3636 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
2SC3636 - SILICON POWER TRANSISTOR (SavantIC)
2SC3630 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3631 - NPN SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
2SC3631-Z - NPN Transistor (NEC)
2SC3631-Z - NPN Transistor (INCHANGE)
2SC3631-Z - SILICON POWER TRANSISTOR (Renesas)
2SC3632 - NPN Transistor (INCHANGE)

Other Datasheets by Inchange Semiconductor

2SC3637 - Silicon NPN Power Transistors
2SC3638 - Silicon NPN Power Transistors
2SC3619 - Silicon NPN Power Transistors
2SC3626 - Silicon NPN Power Transistors
2SC3627 - Silicon NPN Power Transistors
2SC3640 - Silicon NPN Power Transistor

Published: Oct 25, 2013 |