2SC3687 Datasheet PDF - Sanyo Semicon Device NPN Triple Diffused Planar Silicon Transistor Specs

2SC3687 - NPN Triple Diffused Planar Silicon Transistor

Datasheet Summary

Features

Fast speed (tf typ=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process).
Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO :.

Datasheet Details

Part number	2SC3687
Manufacturer	Sanyo Semicon Device
File Size	112.54 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3687 Datasheet
Additional preview pages of the 2SC3687 datasheet.

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Full PDF Text Transcription

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Ordering number:EN1939B NPN Triple Diffused Planar Silicon Transistor 2SC3687 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications · Ultrahigh-definition color display horizontal deflection output. Package Dimensions unit:mm 2022A [2SC3687] Features · Fast speed (tf typ=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process.

Published: Mar 22, 2005 |