2SC3687 - NPN Triple Diffused Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SC3687
Manufacturer	Sanyo Semicon Device
File Size	112.54 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3687 Datasheet
Additional preview pages of the 2SC3687 datasheet.

Fast speed (tf typ=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process).
Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO :.

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Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |