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2SC4411 - PNP Transistor

Key Features

  • High fT (fT=1.2GHz typ).
  • High breakdown voltage (VCBO=100V, VCEO=80V).
  • Large current (IC=500mA).
  • Small reverse transfer capacitance (Cre=3.8pF/ VCB=30V).
  • Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collecto.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC4412 NPN Transistor
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2SC4401 NPN Epitaxial Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3790 PNP Epitaxial Planar Silicon Transistor 2SC4411 Ultrahigh-Definition CRT Display Video Output Applications Applications · Wide-band amplifiers. Features · High fT (fT=1.2GHz typ). · High breakdown voltage (VCBO=100V, VCEO=80V). · Large current (IC=500mA). · Small reverse transfer capacitance (Cre=3.8pF/ VCB=30V). · Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.