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2SC4473 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High fT : fT=500MHz.
  • High breakdown voltage : VCEO=120V min.
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.7pF/NPN, 4.0pF/PNP.
  • Complementary PNP and NPN types.
  • Adoption of FBET process.
  • Micaless type. ( ) : 2SA1696 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2041 [2SA1696/2SC4473] E : Emitter C : Collector B : Base SANYO : TO-220ML Parameter Collector-to-Base Voltage Collector-to-Em.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Features · High fT : fT=500MHz. · High breakdown voltage : VCEO=120V min. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.7pF/NPN, 4.0pF/PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type.