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2SC4474 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High fT : fT=300MHz.
  • High breakdown voltage : VCEO=200V min.
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.2pF/NPN, 2.7 pF/PNP.
  • Adoption of FBET process.
  • Micaless type. Package Dimensions unit:mm 2041 [2SA1697/2SC4474] ( ) : 2SA1697 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collec.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3018 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1697/2SC4474 High-Definition CRT Display, Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Features · High fT : fT=300MHz. · High breakdown voltage : VCEO=200V min. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.2pF/NPN, 2.7 pF/PNP · Adoption of FBET process. · Micaless type.