2SC4475 Datasheet PDF - Sanyo Semicon Device NPN Triple Diffused Planar Silicon Transistor Specs

2SC4475 - NPN Triple Diffused Planar Silicon Transistor

Datasheet Summary

Features

High breakdown voltage (VCEO min=1800V).
Small Cob (Cob typ=1.4pF).
Wide ASO.
High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4475] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Sto.

Datasheet Details

Part number	2SC4475
Manufacturer	Sanyo Semicon Device
File Size	86.25 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC4475 Datasheet
Additional preview pages of the 2SC4475 datasheet.

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Full PDF Text Transcription

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Ordering number:EN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications · High voltage amplifier. · High voltage switching. · Dynamic focus. Features · High breakdown voltage (VCEO min=1800V). · Small Cob (Cob typ=1.4pF). · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4475] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.

Published: Mar 22, 2005 |