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2SC5264LS - NPN TRANSISTOR

Key Features

  • High breakdown voltage (VCBO=1000V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5264] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) C.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5265 NPN TRANSISTOR
2SC5226 NPN TRANSISTOR
2SC5227 NPN TRANSISTOR
2SC5228 NPN TRANSISTOR
2SC5229 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5264] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 2.55 2.55 Conditions 0.