Adoption of MBIT process. Package Dimensions
unit:mm 2079D
[2SC5304]
10.0 3.2 3.5 7.2 4.5 2.8
16.1
16.0
3.6
0.9
1.2 14.0
1.2
0.75 1 2 3
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Sy.
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Ordering number:ENN5883A
NPN Triple Diffused Planar Silicon Transistor
2SC5304LS
Inverter Lighting Applications
Features
· High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5304]
10.0 3.2 3.5 7.2 4.5 2.8
16.1
16.0
3.6
0.9
1.2 14.0
1.2
0.75 1 2 3
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.55 2.55
1:Base 2:Collector 3:Emitter SANYO:TO-220FI (LS)
Ratings 1000 450 9 7 14 2 Unit V V V A A W W
2.4
0.
2SC5304LS Datasheet
