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2SD1621 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET, MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • Large current capacity and wide ASO.
  • Fast switching speed.
  • Very small size making it easy to provide high- density, small-sized hybrid IC’s. [2SB1121/2SD1621] E : Emitter C : Collector B : Base ( ) : 2SB1121 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:1787A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1121/2SD1621 High-Current Driver Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2038 Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Large current capacity and wide ASO. · Fast switching speed. · Very small size making it easy to provide high- density, small-sized hybrid IC’s.