2SD1626 - PNP / NPN Epitaxial Planar Silicon Transistors

Product Overview

Sanyo Semicon Device

Part number	2SD1626
Manufacturer	Sanyo Semicon Device
File Size	63.49 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SD1626 Datasheet
Additional preview pages of the 2SD1626 datasheet.

High DC current gain (4000 or greater).
Large current capacity.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted o.

📁 Similar Datasheet

2SD1628 - NPN Epitaxial Planar Silicon Transistor (Kexin)
2SD1600 - NPN Transistor (INCHANGE)
2SD1601 - Power Transistor (Inchange Semiconductor)
2SD1602 - Power Transistor (Inchange Semiconductor)
2SD1603 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor Company)
2SD1604 - NPN Transistor (Hitachi Semiconductor)
2SD1605 - Power Transistor (Inchange Semiconductor)
2SD1606 - Silicon NPN Transistor (Hitachi Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Apr 3, 2005 |