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2SD1626 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • High DC current gain (4000 or greater).
  • Large current capacity.
  • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted o.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SD1620 NPN Epitaxial Planar Silicon Transistor
2SD1621 PNP/NPN Epitaxial Planar Silicon Transistors
2SD1622 PNP/NPN Epitaxial Planar Silicon Transistors
2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors
2SD1624 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN1721B 2SB1126 / 2SD1626 SANYO Semiconductors DATA SHEET 2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. Features • High DC current gain (4000 or greater). • Large current capacity. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on a ceramic board (250mm2✕0.