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2SD1935 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Large current capacity.
  • Low collector to emitter saturation voltage.
  • Very small-sized package permitting sets to be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1295/2SD1935] ( ) : 2SB1295 Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperat.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications · AF power amplifier, medium-speed switching, smallsized motor drivers. Features · Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets to be made smaller and slimer.