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2SD2028 - NPN Transistor

Key Features

  • With Zener diode (11±3V) between collector and base.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • Ultrasmall-sized package permitting the 2SD2028applied sets to be made small and slim. Package Dimensions unit:mm 2018B [2SD2028] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curren.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features · With Zener diode (11±3V) between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting the 2SD2028applied sets to be made small and slim. Package Dimensions unit:mm 2018B [2SD2028] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.