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2SD600K - PNP/NPN Epitaxial Planar Silicon Transistor

Key Features

  • High breakdown voltage VCEO 100/120V, High current 1A.
  • Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature S.

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Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.