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Ordering number:ENN6396
P-Channel Silicon MOSFET
2SJ339
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SJ339]
10.0 3.2 4.5 2.8
3.5 7.2 16.0
18.1
5.6
14.0
1.6 1.2 0.75 1 2 3 2.55
2.4 0.7
2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25˚C
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Conditions
2.
2SJ339 Datasheet
