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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ338
Audio Frequency Power Amplifier Application
l High breakdown voltage l High forward transfer admittance l Complementary to 2SK2162
: VDSS = −180 V : |Yfs| = 0.7 S (typ.)
2SJ338
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID PD Tch Tstg
−180 ±20 −1 20 150 −55~150
V V A W °C °C
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Marking
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.
2SJ338 Datasheet
