Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Audio Frequency Power Amplifier Application l High breakdown voltage l High forward transfer admittance l plementary to 2SK2162
: VDSS =
- 180 V : |Yfs| = 0.7 S (typ.)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Gate- source voltage
Drain current
(Note 1)
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID PD Tch Tstg
- 180 ±20
- 1 20 150
- 55~150
V V A W °C °C
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Marking
JEDEC
―
JEITA
SC-64
TOSHIBA...