Datasheet Summary
Ordering number : ENN6600
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
- -
Package Dimensions unit : mm 2083B
[2SK2631]
6.5 5.0 4
Low ON resistance. Smaller amount of total gate charge.
0.85 0.7
0.8 1.6
1 : Gate 2 : Drain 3 : Source 4 : Drain
SANYO : TP unit : mm 2092B
[2SK2631]
6.5 5.0 4 2.3
1 0.6
1.2 0 to 0.2
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels...