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Ordering number : ENA0361A
2SK2617ALS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK2617ALS
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. Low Qg. Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition) Conditions Ratings 500 ±30 5 4.5 16 2.