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2SK2618LS - N-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • Low Qg.
  • Ultrahigh-speed switching.
  • Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Parameter Drain-to-Source Breakdown Voltage Zero-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8614 2SK2618LS 2SK2618LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. • Micaless package facilitating mounting.