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Ordering number : ENN5443A
Features
• Low ON-resistance. • Low Qg.
2SK2617LS
N-Channl Silicon MOSFET
2SK2617LS
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm 2078C
[2SK2617LS]
10.0 3.2
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2
1.2
2.4 14.0
0.75 0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
123 2.55 2.55
1 : Gate 2 : Drain 3 : Source
SANYO : TO-220FI(LS)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Electrical Characteristics at Ta=25°C
Tc=25˚C
Conditions
Ratings 500 ±30 4 16 2.